arXiv Science⌕ Search

arXiv · cond-mat/0401576

Molecular states observed in a single pair of strongly coupled self-assembled InAs quantum dots

Abstract

Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We observe a series of well-formed Coulomb diamonds with charging energy of less than 5 meV, which are much smaller than those reported previously. This is because electrons are occupied in molecular states, which are spread over both dots and occupy a large volume. In the measurement of ground and excited state single electron transport spectra with magnetic field, we find that the electrons are sequentially trapped in symmetric and anti-symmetric states. This result is well-explained by numerical calculation using an exact diagonalization method.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

T. Ota, M. Stopa, M. Rontani, T. Hatano, K. Yamada, S. Tarucha, H. Z. Song, Y. Nakata, T. Miyazawa, T. Ohshima, N. Yokoyama. 2004-01-28. Molecular states observed in a single pair of strongly coupled self-assembled InAs quantum dots. https://doi.org/10.1016/j.spmi.2004.03.003

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Mean-Field Study of Normal Metal-Quantum Dot-Superconductor System in the Presence of External Magnetic Field

In this paper, we have analyzed the spectral and transport properties of a weakly correlated single-level quantum dot hybridized with one normal conducting and another Bardeen-Cooper-Schrieffer (BCS) superconducting lead (N-QD-S system) in the presence of an external magnetic field. We have employed Green's function equation of motion (EOM) approach within a self-consistent Hartree-Fock (HF) mean-field approximation to analyze the Hamiltonian. We studied the effect of on-dot Coulomb correlation and an external magnetic field on the sub-gap Andreev levels of a quantum dot, strongly coupled to a conventional s-wave superconductor as a function of impurity parameters. We have shown that for a finite magnetic field, the Andreev bound states (ABSs) split into a spin-up and spin-down contribution (i.e. Zeeman splitting) and cross the Fermi energy level, resulting in a quantum phase transition, which is an indication of a change in the fermion parity of the ground state. Further, within the non-linear regime, we discuss the total electrical conductance for various values of Zeeman energy and on-dot Coulomb interactions. We have compared our results with the existing experimental and theoretical results.

cond-mat.mes-hall↗

Photoinduced topological phase transition in monolayer 1T$^\prime$-MoS$_2$

We investigate the systematic competition between perpendicular electric field and circularly polarized light in nonequilibrium topological phases of monolayer 1T$^\prime$--MoS$_2$ using a low-energy $k\!\cdot\!p$ Hamiltonian and Floquet theory. The off-resonant field generates spin- and valley-dependent mass corrections that reshape the Berry curvature (BC) and shift the conditions for band inversion. By evaluating the quasienergy bands, BC, and spin- valley-resolved Chern numbers, we identify a sequence of light and electric field controlled topological transitions by gap closing. Depending on the Floquet coupling strength and the electric-field parameter, the system evolves between the equilibrium quantum spin Hall (QSH) state and a set of driven phases including spin-polarized quantum Hall insulator (S-QHI), band insulator (BI) and photo-induced quantum Hall insulator (P-QHI) regimes. The results establish 1T$^\prime$--MoS$_2$ as a tunable platform where circular driving selectively manipulates spin and valley degrees of freedom, enabling controlled access to non-equilibrium topological phases in transition metal dichalcogenides (TMDs).

cond-mat.mes-hall↗

Engineering Fractional Topological Superconductors: Numerical Bogoliubov-de Gennes Analysis for Parafermion Realization in FCI-Superconductor Heterostructures

We propose a pathway to engineer Z3 parafermion zero modes in fractional Chern insulator-superconductor heterostructures. Using numerical Bogoliubov-de Gennes calculations and edge-theory analysis, we demonstrate how realistic materials such as MoTe2/NbSe2 can host parafermionic excitations with experimentally accessible signatures, including fractional Josephson effects, localized zero modes, interferometry, and thermal transport. Our work outlines concrete strategies for experimentally accessing parafermionic excitations in FCI-superconductor heterostructures.

cond-mat.mes-hall↗