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Reply to Comment (cond-mat/0311174)

V. M. Pudalov·M. E. Gershenson·H. Kojima·G. Brunthaler·G. Bauer
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Abstract

We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.

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V. M. Pudalov, M. E. Gershenson, H. Kojima, G. Brunthaler, G. Bauer. 2004-04-16. Reply to Comment (cond-mat/0311174). https://arxiv.org/abs/cond-mat/0401031

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