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arXiv · cond-mat/0310755

In situ annealing of superconducting MgB2 films prepared by pulsed laser deposition

Abstract

The in situ annealing conditions of pulsed laser deposited MgB2 films were studied. The precursor films were deposited at 250 C from a stoichiometric MgB2 target in a 120mTorr Ar atmosphere. The films were then in situ annealed at a temperature from 450 C to 800 C and an annealing time from 1 minute to 10 minutes. We found that the superconducting properties depend in a crucial way on the annealing conditions: temperature, heating rate and time. The best film with a thickness of ~600nm was obtained under the following annealing conditions: Tanneal=680-690 C, tanneal=1 min, heating rate= 38 C/min. The Tc onset of the film is 28K with a transition width of ~10K. The hysteresis loop of magnetic moment of the film indicates weak field dependence in high fields. Magneto-optical imaging of the film showed quite homogeneous magnetic flux penetration, indicating structural homogeneity. The films without annealing showed no superconductivity.

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Yue Zhao, Mihail Ionescu, Alexey V. Pan, Shi Xue Dou, E. W. Collings. 2003-10-31. In situ annealing of superconducting MgB2 films prepared by pulsed laser deposition. https://doi.org/10.1088/0953-2048%2F16%2F12%2F037

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