Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

V. V. Bel'kov; S. D. Ganichev; Petra Schneider; C. Back; M. Oestereich; J. Rudolph; D. Haegele; L. E. Golub; W. Wegscheider; W. Prettl

doi:10.1016/j.ssc.2003.08.022

arXiv · cond-mat/0308420

Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

V. V. Bel'kov·S. D. Ganichev·Petra Schneider·C. Back·M. Oestereich·J. Rudolph·D. Haegele·L. E. Golub·W. Wegscheider·W. Prettl

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Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

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V. V. Bel'kov, S. D. Ganichev, Petra Schneider, C. Back, M. Oestereich, J. Rudolph, D. Haegele, L. E. Golub, W. Wegscheider, W. Prettl. 2003-08-21. Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells. https://doi.org/10.1016/j.ssc.2003.08.022

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