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A Low-Temperature Atomic Layer Deposition Liftoff Method for Microelectronic and Nanoelectronic Applications

M. J. Biercuk·D. J. Monsma·C. M. Marcus·J. S. Becker·R. G. Gordon
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Abstract

We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and minimum feature size. Films were deposited at 100-150C using several different precursors and patterned using either PMMA or photoresist. The low deposition temperature permits uniform film growth without significant outgassing or hardbaking of resist layers. A liftoff technique presented here gives sharp step edges with edge roughness as low as ~10 nm. We also measure dielectric constants (k) and breakdown fields for the high-k materials aluminum oxide (k ~ 8-9), hafnium oxide (k ~ 16-19) and zirconium oxide (k ~ 20-29), grown under similar low temperature conditions.

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M. J. Biercuk, D. J. Monsma, C. M. Marcus, J. S. Becker, R. G. Gordon. 2003-06-02. A Low-Temperature Atomic Layer Deposition Liftoff Method for Microelectronic and Nanoelectronic Applications. https://doi.org/10.1063/1.1612904

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