Drain Voltage Scaling in Carbon Nanotube Transistors

M. Radosavljevic; S. Heinze; J. Tersoff; Ph. Avouris

doi:10.1063/1.1610791

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arXiv · cond-mat/0305570

Drain Voltage Scaling in Carbon Nanotube Transistors

M. Radosavljevic·S. Heinze·J. Tersoff·Ph. Avouris

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Abstract

While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in Off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the Off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.

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M. Radosavljevic, S. Heinze, J. Tersoff, Ph. Avouris. 2003-05-23. Drain Voltage Scaling in Carbon Nanotube Transistors. https://doi.org/10.1063/1.1610791

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