Pulsed Laser Deposition of LaAlO3-Ba0.5Sr0.5TiO3 Thin Films for Tunable Device Applications

L. B. Kong; L. Yan; K. B. Chong; C. Y. Tan; L. F. Chen; C. K. Ong

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Pulsed Laser Deposition of LaAlO3-Ba0.5Sr0.5TiO3 Thin Films for Tunable Device Applications

L. B. Kong·L. Yan·K. B. Chong·C. Y. Tan·L. F. Chen·C. K. Ong

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Abstract

LaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The LAO-BST thin films were solid solution of LAO nd BST, with lattice constant decreasing with increasing LAO content. The composition of (LAO)x(BST)1-x, estimated from the lattice constant of the thin films derived from the targets of 1/6, 2/6 and 3/6 LAO, was 0.143, 0.278, 0.476, respectively. The grain size of the thin films decreased as a result of the incorporation of LAO into BST. Dielectric properties of the LAO-BST thin films on Pt/Ti/SiO2/Si were measured at low frequency (100 kHz), while those on LaAlO3 substrate were characterized at high frequency (~7.9 GHz). The dielectric constants of the film derived from pure BST target and those from the targets with 1/6, 2/6 and 3/6 area ratio of LAO, on Pt/Ti/SiO2/Si substrate, were 772, 514, 395 and 282, with a dielectric loss of 0.096, 0.023, 0.024 and 0.025, and a dielectric tunability of 65%, 53%, 43% and 14%, respectively. The dielectric constant of the LAO-BST films on LaAlO3 substrate were 2436, 2148, 2018, 1805, with a maximum dielectric tunability of 11%, 13%, 10% and 8% at a maximum applied voltage of 2.4 kV (~9.2 kV/cm).

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L. B. Kong, L. Yan, K. B. Chong, C. Y. Tan, L. F. Chen, C. K. Ong. 2003-05-08. Pulsed Laser Deposition of LaAlO3-Ba0.5Sr0.5TiO3 Thin Films for Tunable Device Applications. https://arxiv.org/abs/cond-mat/0305156

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