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Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping

T. Wojtowicz·W. L. Lim·X. Liu·M. Dobrowolska·J. K. Furdyna·K. M. Yu·W. Walukiewicz·I. Vurgaftman·J. R. Meyer
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Abstract

The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.

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T. Wojtowicz, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, I. Vurgaftman, J. R. Meyer. 2003-05-02. Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping. https://doi.org/10.1063/1.1628815

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