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Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

H. X. Tang·R. K. Kawakami·D. D. Awschalom·M. L. Roukes
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Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is four orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

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H. X. Tang, R. K. Kawakami, D. D. Awschalom, M. L. Roukes. 2002-10-12. Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices. https://doi.org/10.1103/physrevlett.90.107201

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