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Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As

M. J. Seong·S. H. Chun·Hyeonsik M. Cheong·N. Samarth·A. Mascarenhas
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Abstract

The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first spectroscopic measurement of the hole density in four Ga$_{1-x}$Mn$_{x}$As samples ($x=0, 0.038, 0.061, 0.083$) at room temperature using Raman scattering intensity analysis of the coupled plasmon-LO-phonon mode and the unscreened LO phonon. The unscreened LO phonon frequency linearly decreases as the Mn concentration increases up to 8.3%. The hole density determined from the Raman scattering shows a monotonic increase with increasing $x$ for $x\leq0.083$, exhibiting a direct correlation to the observed $T_c$. The optical technique reported here provides an unambiguous means of determining the hole density in this important new class of ``spintronic'' semiconductor materials.

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M. J. Seong, S. H. Chun, Hyeonsik M. Cheong, N. Samarth, A. Mascarenhas. 2002-06-03. Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As. https://doi.org/10.1103/physrevb.66.033202

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