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Bias-voltage induced phase-transition in bilayer quantum Hall ferromagnets

Yogesh N. Joglekar·Allan H. MacDonald
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Abstract

We consider bilayer quantum Hall systems at total filling factor $ν=1$ in presence of a bias voltage $Δ_v$ which leads to different filling factors in each layer. We use auxiliary field functional integral approach to study mean-field solutions and collective excitations around them. We find that at large layer separation, the collective excitations soften at a finite wave vector leading to the collapse of quasiparticle gap. Our calculations predict that as the bias voltage is increased, bilayer systems undergo a phase transition from a compressible state to a $ν=1$ phase-coherent state {\it with charge imbalance}. We present simple analytical expressions for bias-dependent renormalized charge imbalance and pseudospin stiffness which are sensitive to the softening of collective modes.

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Yogesh N. Joglekar, Allan H. MacDonald. 2002-04-10. Bias-voltage induced phase-transition in bilayer quantum Hall ferromagnets. https://doi.org/10.1103/physrevb.65.235319

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