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A 'p-n' diode with hole and electron-doped lanthanum manganite

C. Mitra·P. Raychaudhuri·G. Kobernik·K. Dorr·R. Pinto·K-H. Muller·L. Schultz
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Abstract

The hole-doped manganite La0.7Ca0.3MnO3 and the electron-doped manganite La0.7Ce0.3MnO3 undergo an insulator to metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have successfully fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e. in the semiconducting regime, it exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode. The observed asymmetry in the I-V characteristics disappears at low temperatures where both the manganite layers are metallic. To the best of our knowledge, this is the first report of such a p-n diode, using the polaronic semiconducting regime of doped manganites.

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C. Mitra, P. Raychaudhuri, G. Kobernik, K. Dorr, R. Pinto, K-H. Muller, L. Schultz. 2001-08-09. A 'p-n' diode with hole and electron-doped lanthanum manganite. https://doi.org/10.1063/1.1409592

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