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Electronic Transport in Metal Nanocrystal Arrays: The Effect of Structural Disorder on Scaling Behavior

Raghuveer Parthasarathy·Xiao-Min Lin·Heinrich M. Jaeger
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Abstract

We investigate the impact of structural disorder on electronic transport in gold nanocrystal monolayers. Arrays ranging from void-filled networks to well-ordered superlattices show clear voltage thresholds V_T due to Coulomb blockade, and temperature-independent conduction indicative of quantum tunneling. Current-voltage characteristics of arrays with and without long-range structural order were found to collapse onto distinct scaling curves. The former follow a single power-law: I (V-V_T)^ζ, ζ= 2.25+/-0.1. The latter show additional structure, reflecting the underlying disordered topology.

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Raghuveer Parthasarathy, Xiao-Min Lin, Heinrich M. Jaeger. 2001-02-24. Electronic Transport in Metal Nanocrystal Arrays: The Effect of Structural Disorder on Scaling Behavior. https://doi.org/10.1103/physrevlett.87.186807

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