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Energetics and bonding properties of the Ni/$β$-SiC (001) interface: an ab-initio study

G. Profeta·A. Continenza·A. J. Freeman
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Abstract

We investigate the adsorption of a Ni monolayer on the $β$-SiC(001) surface by means of highly precise first-principles all-electron FLAPW calculations. Total energy calculations for the Si- and C-terminated surfaces reveal high Ni-SiC adsorption energies, with respect to other metals, confirmining the strong reactivity and the stability of the transition metal/SiC interface. These high binding energies, about 7.3-7.4 eV, are shown to be related to strong $p$-$d$ hybridization, common to both surface terminations and different adsorption sites and despite the large mismatch, can stabilize overlayer growth. A detailed analysis of the bonding mechanism, hybridization of the surface states, charge transfer and surface core level shifts reveals the strong covalent character of the bonding. After a proper accounting of the Madelung term, the core level shift is shown to follow the charge transfer trend.

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G. Profeta, A. Continenza, A. J. Freeman. 2001-02-21. Energetics and bonding properties of the Ni/$β$-SiC (001) interface: an ab-initio study. https://doi.org/10.1103/physrevb.64.045303

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