Relation between Raman spectra and Structure of Amorphous Silicon

R. L. C. Vink; G. T. Barkema; W. F. van der Weg

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arXiv · cond-mat/0005255

Relation between Raman spectra and Structure of Amorphous Silicon

R. L. C. Vink·G. T. Barkema·W. F. van der Weg

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Abstract

In 1985, Beeman, Tsu and Thorpe established an almost linear relation between the Raman transverse-optic (TO) peak width and the spread in mean bond angle in a-Si. This relation is often used to estimate the latter quantity in experiments. In the last decade, there has been significant progress in the computer generation of sample networks of amorphous silicon. Exploiting this progress, this manuscript presents a more accurate determination of the relation between the TO peak width and angular spread using 1000-atom configurations. Also investigated and quantified are the relations between the TO peak frequency and the ratio of the intensities of the transverse-acoustic (TA) and TO peak, both as functions of the angular spread. As this spread decreases, the TA/TO intensity ratio decreases and the TO peak frequency increases. These relations offer additional ways to obtain structural information on a-Si from Raman measurements.

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R. L. C. Vink, G. T. Barkema, W. F. van der Weg. 2000-05-16. Relation between Raman spectra and Structure of Amorphous Silicon. https://arxiv.org/abs/cond-mat/0005255

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