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Transition from band insulator to Mott insulator in one dimension: Critical behavior and phase diagram

Jizhong Lou·Shaojin Qin·Tao Xiang·Changfeng Chen·Guang-Shan Tian·Zhaobin Su
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Abstract

We report a systematic study of the transition from a band insulator (BI) to a Mott insulator (MI) in a one-dimensional Hubbard model at half-filling with an on-site Coulomb interaction U and an alternating periodic site potential V. We employ both the zero-temperature density matrix renormalization group (DMRG) method to determine the gap and critical behavior of the system and the finite-temperature transfer matrix renormalization group method to evaluate the thermodynamic properties. We find two critical points at U = $U_c$ and U = $U_s$ that separate the BI and MI phases for a given V. A charge-neutral spin-singlet exciton band develops in the BI phase (U<$U_c$) and drops below the band gap when U exceeds a special point Ue. The exciton gap closes at the first critical point $U_c$ while the charge and spin gaps persist and coincide between $U_c$ $U_s$) the charge gap increases almost linearly with U while the spin gap remains zero. These findings clarify earlier published results on the same model, and offer insights into several important issues regarding an appropriate scaling analysis of DMRG data and a full physical picture of the delicate nature of the phase transitions driven by electron correlation. The present work provides a comprehensive understanding for the critical behavior and phase diagram for the transition from BI to MI in one-dimensional correlated electron systems with a periodic alternating site potential.

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Jizhong Lou, Shaojin Qin, Tao Xiang, Changfeng Chen, Guang-Shan Tian, Zhaobin Su. 2003-08-20. Transition from band insulator to Mott insulator in one dimension: Critical behavior and phase diagram. https://doi.org/10.1103/physrevb.68.045110

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