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Pseudogap effects on the c-axis charge dynamics in copper oxide materials

Shiping Feng·Feng Yuan·Weiqiang Yu
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Abstract

The c-axis charge dynamics of copper oxide materials in the underdoped and optimally doped regimes has been studied by considering the incoherent interlayer hopping. It is shown that the c-axis charge dynamics for the chain copper oxide materials is mainly governed by the scattering from the in-plane fluctuation, and the c-axis charge dynamics for the no-chain copper oxide materials is dominated by the scattering from the in-plane fluctuation incorporating with the interlayer disorder, which would be suppressed when the holon pseudogap opens at low temperatures and lower doping levels, leading to the crossovers to the semiconducting-like range in the c-axis resistivity and the temperature linear to the nonlinear range in the in-plane resistivity.

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Shiping Feng, Feng Yuan, Weiqiang Yu. 2000-01-19. Pseudogap effects on the c-axis charge dynamics in copper oxide materials. https://doi.org/10.1007/s100510051163

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