Double-Layer Silicon PIN Photodiode X-Ray Detector for a Future X-ray Timing Mission

Hua Feng; Philip Kaaret; Hans Andersson

doi:10.1016/j.nima.2006.05.013

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arXiv · astro-ph/0606037

Double-Layer Silicon PIN Photodiode X-Ray Detector for a Future X-ray Timing Mission

Hua Feng·Philip Kaaret·Hans Andersson

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Abstract

A double-layer silicon detector consisting of two 500micron-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1-30 keV with an effective area of 6 mm^2. The detector performs best at -35 C with an energy resolution of 220 eV (FWHM, full width at half maximum) at 5.9 keV, and is able to operate at room temperature, +25 C, with moderate resolution around 760 eV (FWHM). The response of the top layer sensor is highly uniform across the sensitive area. This large-format silicon detector is appropriate for future X-ray timing missions.

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Hua Feng, Philip Kaaret, Hans Andersson. 2006-06-01. Double-Layer Silicon PIN Photodiode X-Ray Detector for a Future X-ray Timing Mission. https://doi.org/10.1016/j.nima.2006.05.013

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