Longitudinal and Transverse Thermoelectric Properties in Topological Quantum Materials

Abstract

Thermoelectric materials can be topologically trivial or non-trivial, enabling reversible interconversion of heat and electricity using a solid-state technology. Incidentally, few of the first experimentally discovered 3D topological materials, namely, Bi, Sb, Sn and Pb-based chalcogenides, were long known as good thermoelectric materials. In these compounds, the heavy atoms that give rise to strong spin-orbit coupling often become essential for band inversion and non-trivial band topology. They lead to low lattice thermal conductivity, linearly dispersing Dirac-like bands induce high electrical mobility, and a band-inverted electronic structure with multiple band extrema gives rise to high Seebeck coefficients. In materials, where the applied temperature gradient induces electrical voltage (Seebeck effect) in the same direction, they are termed as longitudinal thermoelectrics. On the other hand, when the generated electrical voltage and applied thermal current remain orthogonal to each other, the materials are termed as transverse thermoelectrics. The transverse response can be driven by an additional external magnetic field (ordinary Nernst effect), intrinsic remanent magnetisation, or non-zero Berry curvature of a material, which arises from their non-trivial topology (anomalous Nernst effect). We discuss another class of quantum materials, known as goniopolar materials, that exhibit axis-dependent conduction polarity and hence transverse thermoelectric effects, which are based on mechanisms of longitudinal thermoelectric properties. In this review, we cover both types of thermoelectricity, focusing on materials that possess non-trivial topological order. We make connections between their structures, topology and transport properties and suggest tunability of thermoelectric properties going beyond conventional mechanisms such as electron-phonon interactions.