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arXiv · 2611.02351

Amplification of valley polarization in an hBN-separated MoSe2-WSe2 heterostructure

Fateme Mahdikhany·Jacob Cutshall·Daniel Shanks·Garett Reichenbach·Davoud Adinehloo·Michael R. Koehler·David G. Mandrus·Takashi Taniguchi·Kenji Watanabe·Vasili Perebeinos·Brian J. LeRoy·John R. Schaibley
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Abstract

Transition metal dichalcogenide heterostructures host long-lived interlayer excitons in the +K and -K valleys that can encode long-lived valley polarization. We investigated the low-temperature valley polarization dynamics in an MoSe2-bilayer hBN-WSe2 heterostructure. The bilayer hBN spacer results in an interlayer exciton lifetime exceeding 2 μs and an anomalous valley polarization amplification effect. Our theoretical model shows that this amplification results from the long exciton lifetime and exciton-exciton interactions. This work sets the stage for long-lived interlayer excitons to be used in nonlinear valleytronic transistors and amplifiers.

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Fateme Mahdikhany, Jacob Cutshall, Daniel Shanks, Garett Reichenbach, Davoud Adinehloo, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Vasili Perebeinos, Brian J. LeRoy, John R. Schaibley. 2026-11-02. Amplification of valley polarization in an hBN-separated MoSe2-WSe2 heterostructure. https://doi.org/10.1103/wktk-zl2r

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