Visualizing Anisotropic Charge Transport in CrSBr using Bias-Dependent Kelvin Probe Force Microscopy

Abstract

Anisotropic semiconductors offer unique opportunities for next-generation electronics due to their direction-dependent transport. However, conventional electrical measurements provide only spatially averaged characteristics. Here, we employ bias-dependent Kelvin probe force microscopy (KPFM) to directly visualize the response of CrSBr under different electrical bias configurations. Spatially resolved KPFM maps reveal highly distinct, crystallographic-direction-dependent potential profiles. To elucidate this behavior, we employ anisotropic transport simulations that capture the charge transport and electric-field distributions in CrSBr. The close agreement between experiment and simulation provides a unified picture of anisotropic charge transport and bias-induced potential redistribution. Our experiments further reveal a boundary-associated redistribution of the transport field when bias is applied along the $a$-axis, suggesting a possible role of crystal boundaries in charge transport along the low-conductivity direction. This work establishes bias-dependent KPFM as a powerful platform for uncovering localized transport phenomena in low-symmetry quantum materials.