The Flexoelectric Twist: Persistence of Heavy Fermion Picture in Small-Angle Twisted Bilayer Graphene

Abstract

Twisted bilayer graphene (TBG) near the first magic angle ($θ\approx1.05^{\circ}$) hosts flat bands that provide a fertile ground for exploring strongly correlated and topological phases. At smaller twist angles ($θ<1^{\circ}$), attice relaxation profoundly alters the moiré landscape. The extent to which moiré lattice reconstruction at different length scales affects the electronic structure through electro-mechanical coupling remains unresolved. Here, using scanning tunneling microscopy on small-angle TBG devices ($θ\approx0.3-0.7^{\circ}$), we observe a pronounced $dI/dV$ peak at the AA site of the moiré lattice on top of a spectrum that is asymmetric about the charge neutrality point, lattice reconstruction over moiré lattice length scales, as well as a dilation of the atomic lattice at the AA sites. We demonstrate at a phenomenological level that the inclusion of moiré lattice reconstruction supports compact localized heavy fermion $f-$ states localized at AA sites. The additional inclusion of atomic lattice dilation enerates a strong flexo-electric response that explicitly breaks particle-hole symmetry, pushing compact, localized $f$-states at the AA sites down in energy. Consequently, these heavy fermion states energetically coexist with itinerant $c$-electrons at the AB/BA sites. Our spatially resolved spectroscopic measurements quantitatively visualize this coexistence, confirming the persistence of the heavy fermion model in the small-angle regime $θ<1^{\circ}$. Our findings provide microscopic insights into how flexo-electricity affects the low-energy electronic structure of small-angle TBG. More broadly, our study establishes small-angle TBG as a new class of moiré materials to explore the interacting Kondo lattice problem with high tunability of the $f-$occupation and $c-$density through twist-angle and electrostatic back gates, respectively.