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arXiv · 2610.36313

Oxygen partial pressure induced dielectric phase evolution in PLD deposited Barium Strontium Titanate thin films

Shashi Pandey·Suk Hyun Sung·Jacob Fernandez·John T. Heron
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Abstract

Barium Strontium Titanate ((BaxSr1-x)TiO3, BST) thin films are amongst the most extensively studied dielectric alloys over the last decade. This is due to the tunability of the dielectric constant and dissipation factor in the underlying ferroelectric and paraelectric states. One important feature of BST is that the competition between the ferroelectric BaTiO3 and the paraelectric SrTiO3 parent phases can be tuned by the A-site alloy concentration, opening a platform for exploring dielectric phase competition. However, the understanding of the interplay between and establishing the control of the dielectric phase from thin film deposition parameters has not been sufficiently reported in the literature. Here, we synthesized a series of SrRuO3/BST/SrRuO3 epitaxial thin film heterostructures by Pulsed Laser Deposition (PLD) from a (Ba0.9Sr0.1)TiO3 target under systematic variation of the oxygen partial pressure during the BST deposition. We mapped the dielectric phase of the film to the oxygen growth pressure, film composition, and film crystal structure. A ferroelectric, relaxor-like, or paraelectric phase can be obtained with relatively moderate change in oxygen growth pressure. Scanning transmission electron microscopy (STEM) analysis further indicates that this pressure-dependent phase evolution is accompanied by a structural transition of the BST lattice from tetragonal toward a nearly cubic phase, with the latter corresponding to the relaxor-like state. The control of the dielectric phase opens a pathway to study phase evolution and enable future computing technologies.

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Shashi Pandey, Suk Hyun Sung, Jacob Fernandez, John T. Heron. 2026-10-26. Oxygen partial pressure induced dielectric phase evolution in PLD deposited Barium Strontium Titanate thin films. https://arxiv.org/abs/2610.36313

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