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arXiv · 2610.30905

Broadband emitter localization and prefabrication two-photon interference from InAs/InP quantum dots monolithically grown on an InGaAsP/InP distributed Bragg reflector

Paweł Mrowiński·Jan Śmigiel·Mikołaj Badura·Beata Ściana·Wojciech Kijaszek·Emilia Zięba-Ostój·Paweł Holewa·Marcin Syperek
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Abstract

We demonstrate a monolithic telecom C-band single-photon platform based on low-density InAs/InP quantum dots grown on an InGaAsP/InP distributed Bragg reflector, with simulated upward light-extraction efficiency exceeding 10% within the 40 nm spectral band. Enhanced light extraction is crucial for wide-field photoluminescence imaging, enabling approximately 3 nm statistical centroid-localization precision of QD emitters due to improved signal-to-noise ratio. The identified charged exciton emitting at 1549.5 nm exhibits single-photon emission purity up to 94.7%, validated by a raw peak-area integration under pulsed quasi-resonant excitation. Under these conditions, photons emitted sequentially from the unprocessed planar structure reveal a raw two-photon interference visibility of 51% of the photon wave packet within the 2 ns time window and 41% over a 4 ns integration window, all without Purcell enhancement typical for cavity-embedded emitters. Combining broadband extraction, high photon coherence, and emitter preselection on a native III-V wafer, this architecture paves the way for marker-based deterministic fabrication of high-quality monolithic nanophotonic devices.

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Paweł Mrowiński, Jan Śmigiel, Mikołaj Badura, Beata Ściana, Wojciech Kijaszek, Emilia Zięba-Ostój, Paweł Holewa, Marcin Syperek. 2026-10-22. Broadband emitter localization and prefabrication two-photon interference from InAs/InP quantum dots monolithically grown on an InGaAsP/InP distributed Bragg reflector. https://arxiv.org/abs/2610.30905

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