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arXiv · 2610.25079

Dynamic Hotspot Migration and Self-Induced Resonances in Ultrafast Laser-Irradiated Silicon Thin Films

George D. Tsibidis·Yi Wang·Emmanuel Stratakis
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Abstract

The spatial distribution of energy in silicon thin films under femtosecond laser irradiation is demonstrated to be influenced by the interaction between carrier-induced refractive index modulation and self-induced Fabry-Pérot resonances. We resolve three characteristic excitation regions such as interface-localized, binodal and multi-nodal regimes considering the analysis of silicon-on-insulator (SOI) configurations across thicknesses of 100, 230, and 350 nm. We report a nonlinear hotspot migration effect where the transient reduction of the refractive index stretches the internal standing wave, translating intensity antinodes toward the film volume during the pulse. Numerical results demonstrate that at higher fluences, plasma-induced extinction suppresses internal reflections, triggering a transition from resonance-mediated absorption to plasma shielding. These findings establish a physical basis for depth-resolved modification in laser nanomanufacturing, providing a dual-capacity for simultaneous surface patterning and depth-resolved subsurface modification with direct applications in laser-assisted interfacial separation and 3D integrated photonic fabrication.

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George D. Tsibidis, Yi Wang, Emmanuel Stratakis. 2026-10-18. Dynamic Hotspot Migration and Self-Induced Resonances in Ultrafast Laser-Irradiated Silicon Thin Films. https://arxiv.org/abs/2610.25079

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