Site-Specific Orbital Symmetry Breaking in Epitaxial Graphene on Silicon Carbide

Abstract

The epitaxial graphene grown on SiC interface has been the subject of tremendous research efforts to control its electronic transport properties in the quest for graphene electronic applications. The electronic structure of the epitaxial graphene buffer layer on SiC(0001) is investigated at the atomic scale using monochromated electron energy loss spectroscopy (EELS) in an aberration-corrected scanning transmission electron microscope (STEM). The C $K$-edge reveals spectral fine structures distinctly different from free-standing graphene layer, providing direct experimental evidence of a modified bonding environment. Ab initio calculations providing a site-resolved probe of orbital character to elucidate the origin of these spectral features: covalent bonding between one-quarter of the buffer-layer carbon atoms and the substrate silicon atoms induces partial $\mathrm{sp}^3$ hybridization, quenching the out-of-plane $π$ states and disrupting $π$-conjugation across the interfacial layer. Substrate-imposed symmetry breaking further lifts the in-plane orbital degeneracy. This orbital-engineering framework, rooted in $π$-state quenching and site-specific symmetry breaking, establishes a quantitative basis for tailoring graphene-substrate interfaces toward next-generation low-energy transistor applications.