arXiv Science⌕ Search

arXiv · 2610.03416

Floquet density response in laser-assisted fast-electron scattering from solids

Abstract

We extend the Bethe--Floquet formalism of Joachain and coworkers, originally developed for laser-assisted electron--atom collisions, to inelastic scattering of fast electrons from a many-body condensed-matter target in a time-periodic light field. At first order in the projectile--target interaction, the general Floquet--Fourier cross section separates into exact laser-dressed projectile kernels and a matrix-valued Floquet density response of the target. For spatially structured or translationally non-invariant systems, the latter is the bi-momentum Floquet structure factor; its momentum diagonal defines the Floquet generalization of the dynamic structure factor, constrained by Hermiticity, positivity, and sum rules. As a controlled realization of the general projectile kernel, an eikonal--Volkov approximation for slowly varying inhomogeneous fields yields a finite-momentum-resolution convolution of the target response. In the homogeneous-field dipole limit, the projectile kernel reduces to Bessel-function sidebands and the cross section takes the familiar Bethe--Floquet form. The Floquet density correlator separates exactly into the outer product of the pump-induced coherent mean density and connected fluctuations. In the straight-trajectory nonrecoil limit, the coherent, target-elastic sector defines the weak-coupling PINEM amplitude; repeated coherent insertions generate the PINEM Bessel ladder, with an explicit no-double-counting prescription for combining this channel with connected losses. As worked examples, we evaluate the connected, target-changing cross section analytically for a metal in the Drude and diffusive limits, recovering Bessel-weighted plasmon-loss and diffusive combs, and for a driven two-level model that exhibits off-diagonal Floquet coherences through Bessel-channel interference.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Ferdinand Evers, Sascha Schäfer, Richard Korytár. 2026-10-02. Floquet density response in laser-assisted fast-electron scattering from solids. https://arxiv.org/abs/2610.03416

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Coupled reaction and diffusion governing interface evolution in solid-state batteries

Understanding and controlling the atomistic-level reactions governing the formation of the solid-electrolyte interphase (SEI) is crucial for the viability of next-generation solid state batteries. However, challenges persist due to difficulties in experimentally characterizing buried interfaces and limits in simulation speed and accuracy. We conduct large-scale explicit reactive simulations with quantum accuracy for a symmetric battery cell, {\symcell}, enabled by active learning and deep equivariant neural network interatomic potentials. To automatically characterize the coupled reactions and interdiffusion at the interface, we formulate and use unsupervised classification techniques based on clustering in the space of local atomic environments. Our analysis reveals the formation of a previously unreported crystalline disordered phase, Li$_2$S$_{0.72}$P$_{0.14}$Cl$_{0.14}$, in the SEI, that evaded previous predictions based purely on thermodynamics, underscoring the importance of explicit modeling of full reaction and transport kinetics. Our simulations agree with and explain experimental observations of the SEI formations and elucidate the Li creep mechanisms, critical to dendrite initiation, characterized by significant Li motion along the interface. Our approach is to crease a digital twin from first principles, without adjustable parameters fitted to experiment. As such, it offers capabilities to gain insights into atomistic dynamics governing complex heterogeneous processes in solid-state synthesis and electrochemistry.

cond-mat.mtrl-sci↗

Amorphization-Mediated Si-I to Si-V Phase Transition and Reversible Amorphous-Si-V Phase Memory in Silicon Nanoparticles

An experiment has shown that ~10 nm Si nanoparticles undergo a Si-I (diamond cubic) to Si-V (simple hexagonal) phase transition under compression, in contrast to the Si-I to Si-II (tetragonal) transition observed in bulk silicon. However, the atomistic mechanism underlying this size-dependent transition pathway remains unclear. Here, we employ molecular dynamics simulations with a machine learning interatomic potential to reveal a stress triaxiality driven, two-step Si-I to Si-V transition pathway in a spherical Si nanoparticle subjected to an idealized triaxial contact loading model. An intermediate amorphous phase nucleates at the nanoparticle surface and propagates inward around the Si-I core in regions of low stress triaxiality dominated by shear. Within this amorphous shell, Si-V recrystallizes at locations with elevated stress triaxiality and hydrostatic pressure. Upon unloading, the Si-V structure transforms into an amorphous state. A subsequent loading-unloading cycle applied to this amorphous nanoparticle reveals a reversible amorphous-to-Si-V transformation, demonstrating a nanoscale phase-memory effect.

cond-mat.mtrl-sci↗

Reduced-order topology optimization of defect spectra in phononic crystals

Defect modes localize vibrations within phononic-crystal bandgaps. Prescribing their frequencies alone does not ensure separation from competing modes. We use frequency-dependent selection weights to combine attraction of target-adjacent modes with repulsion of competing in-gap modes. Only the central defect cell is optimized within a previously designed, fixed host bandgap. Cell-level Craig--Bampton reduction retains physical interface coordinates, allowing the host contribution to be assembled once while the defect basis and matrices are updated. Across three numerical cases, the reduced-order method accelerates defect optimization by approximately 13--20 times. A comparison with attraction-only optimization shows that the combined objective moves competing modes away from the target and increases the minimum target-to-non-target frequency separation. Full-order reanalysis shows that the optimized modes remain close to the prescribed frequencies and localized around the defect. A finite-array calculation shows enhanced response near the target relative to the defect-free host under the prescribed loading.

cond-mat.mtrl-sci↗