arXiv Science⌕ Search
Home/Archive/arXiv

arXiv · 2610.02871

Orientation refinement for nanobeam precession electron diffraction patterns using spot intensity profiles

Arthur Després·Muriel Vérion·Edgar F. Rauch
View original source ↗Read source document ↗Export metadata ↓

Abstract

We develop a method to measure crystallographic orientations with high angular resolution for nano-beam precession electron diffraction patterns, and applicable to 4D scanning precession electron diffraction. We show that internal variations of intensity in the diffraction spots can be simulated and correlated to experimental variations to measure the crystallographic orientation with a much better angular resolution that with the standard method of automated crystal orientation mapping (ACOM). In a tilt series carried out with long exposure time on a monocrystal of silicon around the main goniometer tilt axis, the imposed tilt angles are retrieved with a 0.044° to 0.054° precision with refinement, against 0.25° to 0.33° with the standard method. Shorter exposure times, introducing Poisson noise, marginally degrade the precision to a 0.054° to 0.066° range. The method also corrects a systematic error of ACOM near zone axis.

Explore related subjects

cond-mat.mtrl-sci

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Arthur Després, Muriel Vérion, Edgar F. Rauch. 2026-10-02. Orientation refinement for nanobeam precession electron diffraction patterns using spot intensity profiles. https://arxiv.org/abs/2610.02871

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Coupled reaction and diffusion governing interface evolution in solid-state batteries

Understanding and controlling the atomistic-level reactions governing the formation of the solid-electrolyte interphase (SEI) is crucial for the viability of next-generation solid state batteries. However, challenges persist due to difficulties in experimentally characterizing buried interfaces and limits in simulation speed and accuracy. We conduct large-scale explicit reactive simulations with quantum accuracy for a symmetric battery cell, {\symcell}, enabled by active learning and deep equivariant neural network interatomic potentials. To automatically characterize the coupled reactions and interdiffusion at the interface, we formulate and use unsupervised classification techniques based on clustering in the space of local atomic environments. Our analysis reveals the formation of a previously unreported crystalline disordered phase, Li$_2$S$_{0.72}$P$_{0.14}$Cl$_{0.14}$, in the SEI, that evaded previous predictions based purely on thermodynamics, underscoring the importance of explicit modeling of full reaction and transport kinetics. Our simulations agree with and explain experimental observations of the SEI formations and elucidate the Li creep mechanisms, critical to dendrite initiation, characterized by significant Li motion along the interface. Our approach is to crease a digital twin from first principles, without adjustable parameters fitted to experiment. As such, it offers capabilities to gain insights into atomistic dynamics governing complex heterogeneous processes in solid-state synthesis and electrochemistry.

cond-mat.mtrl-sci↗
arXiv2026

Amorphization-Mediated Si-I to Si-V Phase Transition and Reversible Amorphous-Si-V Phase Memory in Silicon Nanoparticles

An experiment has shown that ~10 nm Si nanoparticles undergo a Si-I (diamond cubic) to Si-V (simple hexagonal) phase transition under compression, in contrast to the Si-I to Si-II (tetragonal) transition observed in bulk silicon. However, the atomistic mechanism underlying this size-dependent transition pathway remains unclear. Here, we employ molecular dynamics simulations with a machine learning interatomic potential to reveal a stress triaxiality driven, two-step Si-I to Si-V transition pathway in a spherical Si nanoparticle subjected to an idealized triaxial contact loading model. An intermediate amorphous phase nucleates at the nanoparticle surface and propagates inward around the Si-I core in regions of low stress triaxiality dominated by shear. Within this amorphous shell, Si-V recrystallizes at locations with elevated stress triaxiality and hydrostatic pressure. Upon unloading, the Si-V structure transforms into an amorphous state. A subsequent loading-unloading cycle applied to this amorphous nanoparticle reveals a reversible amorphous-to-Si-V transformation, demonstrating a nanoscale phase-memory effect.

cond-mat.mtrl-sci↗
arXiv2026

Reduced-order topology optimization of defect spectra in phononic crystals

Defect modes localize vibrations within phononic-crystal bandgaps. Prescribing their frequencies alone does not ensure separation from competing modes. We use frequency-dependent selection weights to combine attraction of target-adjacent modes with repulsion of competing in-gap modes. Only the central defect cell is optimized within a previously designed, fixed host bandgap. Cell-level Craig--Bampton reduction retains physical interface coordinates, allowing the host contribution to be assembled once while the defect basis and matrices are updated. Across three numerical cases, the reduced-order method accelerates defect optimization by approximately 13--20 times. A comparison with attraction-only optimization shows that the combined objective moves competing modes away from the target and increases the minimum target-to-non-target frequency separation. Full-order reanalysis shows that the optimized modes remain close to the prescribed frequencies and localized around the defect. A finite-array calculation shows enhanced response near the target relative to the defect-free host under the prescribed loading.

cond-mat.mtrl-sci↗