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arXiv · 2610.02380

Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature

Subhashree Chatterjee·Abhishek Bajgain·Rabindra Basnet·Ramesh C. Budhani
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Abstract

Ambient-temperature coexistence of ferroelectricity, photoconductivity, and ionic transport in ultra-thin van der Waals (vdW) compound CuCrP2S6 (CCPS) offers significant potential for multifunctional electronic, photonic, and neuromorphic applications. However, ferroelectricity and ionic transport can become antagonistic when sharing a common atomic origin, like the copper ions in CCPS. We address this fundamental dichotomy by systematically investigating the thickness-dependent evolution of ferroelectricity, ionic migration, and memristive behavior in CCPS diodes via electrostatic and photo-assisted interfacial band tuning. Using piezoresponse, Kelvin probe, and conductive atomic force microscopy, alongside photoexcited transport measurements, we identify distinct thickness regimes. CCPS flakes thinner than ~ 40 nm exhibit robust, reversible ferroelectric (FE) switching. Conversely, thicker samples display suppressed switchable polarization, with electrical conduction dominated by Cu+ migration, filamentary memristive switching, and rectification reversal. Optical illumination further enhances ionic mobility via photogenerated carriers, driving photo-assisted ionic transport in non-FE flakes and a coupled photoferroionic response in FE flakes. These findings clarify how ferroelectricity fundamentally alters ionic transport dynamics in vdW ferroionic systems.

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Subhashree Chatterjee, Abhishek Bajgain, Rabindra Basnet, Ramesh C. Budhani. 2026-10-01. Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature. https://arxiv.org/abs/2610.02380

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