Interlayer dark excitons in a van der Waals heterostructure

Rundong Ma; Konstantin Davydov; Liuxin Gu; Lifu Zhang; Hassan Alnatah; Beini Gao; Ruihao Ni; Suji Park; Houk Jang; Takashi Taniguchi; Kenji Watanabe; You Zhou

arXiv · 2609.38033

Interlayer dark excitons in a van der Waals heterostructure

Rundong Ma·Konstantin Davydov·Liuxin Gu·Lifu Zhang·Hassan Alnatah·Beini Gao·Ruihao Ni·Suji Park·Houk Jang·Takashi Taniguchi·Kenji Watanabe·You Zhou

View original source ↗Read source document ↗Export metadata ↓

Abstract

Interlayer excitons in transition metal dichalcogenide (TMD) heterostructures exhibit long lifetimes and long-range transport, making them promising for excitonic devices and quantum many-body phases, such as Bose-Einstein condensates. Achieving these goals requires a precise understanding of spin-allowed bright and nominally spin-forbidden dark excitons, because the lowest-energy exciton species governs population, transport, and condensation. Despite substantial progress, unambiguously distinguishing singlet and triplet interlayer excitons has been challenging, as moiré excitons in these heterostructures can mimic their optical signatures. Here, we report the direct spectroscopic identification of bright (singlet) and dark (triplet) interlayer excitons in high-quality, dual-gated WSe$_2$/hBN/WSe$_2$ homobilayers. Electric-field-dependent photoluminescence and reflectance reveal two momentum-direct interlayer transitions with distinct spin configurations. The interlayer dark excitons obey selection rules that differ from those of bright excitons. Strikingly, interlayer dark excitons retain strong valley polarization, even with their ultralong lifetime exceeding microseconds. Finally, we demonstrate twist-angle control, wherein twist-induced electron-hole momentum mismatch modulates interlayer exciton emission. These results provide critical insights into the electronic and excitonic structure of TMD heterostructures, opening new avenues for excitonic many-body physics and optoelectronic devices.

Explore related subjects

cond-mat.mes-hall cond-mat.mtrl-sci physics.optics

Keep this discovery

Explore connections, maps & timelines

BibTeX RIS

Rundong Ma, Konstantin Davydov, Liuxin Gu, Lifu Zhang, Hassan Alnatah, Beini Gao, Ruihao Ni, Suji Park, Houk Jang, Takashi Taniguchi, Kenji Watanabe, You Zhou. 2026-09-29. Interlayer dark excitons in a van der Waals heterostructure. https://arxiv.org/abs/2609.38033

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Tunneling probe-based characterisation of the sp${}^3$ dangling bond on the H-C(100):$2\times1$ surface

The sp${}^3$ dangling bond on the diamond surface plays a critical role in the performance and fabrication of diamond quantum technologies. For the former, the magnetic and electric properties of this defect can impede the performance of quantum sensors and computers. For the latter, the chemical properties of the dangling bond are integral to proposed methods for bottom-up fabrication of scalable diamond quantum devices. In pursuit of high-performance, scalable diamond quantum technology, tunnelling probe-based techniques offer the ability to create and modify the sp${}^3$ dangling bond with atomic-scale precision. However, these capabilities cannot be realised either deterministically or at scale without a means of identifying the sp${}^3$ dangling bond amidst the myriad of other defects on the diamond surface. Consequently, in this work we provide a comprehensive experimental and theoretical framework for STS-based characterisation of the sp${}^3$ defect on the H-terminated (100) diamond surface. This capability provides the foundation for future tunnelling probe studies in the modification of dangling bonds.

cond-mat.mes-hall↗

arXiv2026

Damping-dependent thermalization of neighboring nanomechanical resonators below 1 mK

The position noise spectra of six drums on a single chip were measured on a single cooldown below 1.3 kelvin. Cryostat temperatures as low as 0.7 mK were achieved. The temperature dependence of the resonance frequency and linewidth of the drum modes was analyzed in the framework of the tunneling two level system (TLS) model. Departures of the resonance frequency and the position noise power from the expected logarithmic and linear temperature dependences, respectively, were interpreted as indications of thermal decoupling from the cryostat. This previously unexplored measurement configuration revealed that similar neighboring drums on a single chip may be at different temperatures. At the lowest temperatures, some drums exhibited excess damping that decreased with temperature. The magnitude of the excess damping of the drums was correlated with the thermal coupling of their TLS to the cryostat. In the case of one drum, a temporary increase in its damping coincided with a decrease in its mode temperature. The thermalization of the TLS to the cold finger was independent of pump power, pulse tube state and temperature of the pre-cooling stages of the cryostat. These results suggest that thermalization of nanomechanics to the cryostat can be mediated by TLS damping rather than clamping loss and may impact efforts to extend the coherence of mechanical resonators.

cond-mat.mes-hall↗

arXiv2026

Symmetry-enabled tunable square-lattice Hubbard models in $Γ$-valley moiré bilayers

Square-lattice moiré systems provide a promising route for quantum simulation of Hubbard physics, yet electrically tunable realizations of the hopping ratio $t'/t$ have so far been limited to specific valley configurations. A natural question is whether the same tunability can be extended to the more broadly occurring $Γ$-valley systems. Here we identify a symmetry-controlled route for realizing electrically tunable square-lattice Hubbard models in $Γ$-valley twisted homobilayers. At small twist angles, an emergent layer-exchange symmetry separates the low-energy states into flat bands localized on two nested square sublattices, suppressing inter-sublattice hopping. An interlayer displacement field breaks this symmetry and induces controllable hybridization between the sublattices, enabling continuous tuning of the $t'/t$ ratio over a wide range while preserving an effective single-band description. We further establish a formal correspondence between $Γ$- and M-valley moiré systems, revealing them as different symmetry limits of a unified framework for tunable square-lattice Hubbard models. Our results uncover a general symmetry principle underlying displacement-field tunability and extend electrically controllable square-lattice Hubbard physics to a broad family of $Γ$-valley materials.

cond-mat.mes-hall↗