Ferroelectric Switching in ZnO/Zn1-xMgxO Heterostructures: Atomistic Insights into Interfacial Coupling and Layer Architecture

Abstract

Ferroelectric switching in heterostructures couples composition, layer topology, temperature, and interfacial boundary conditions. ReaxFF molecular dynamics isolates these variables in ZnO/ Zn1- xMgxO/ZnO and Zn1-xMgxO/ZnO/ Zn1-xMgxO stacks. Within pristine, initially single-domain models, coupling to switchable Zn1-xMgxO reduces the applied field required to reverse ZnO by up to fivefold. Temperature generally lowers the coercive field, whereas Mg concentration produces a nonmonotonic response. At equal ZnO and Zn1-xMgxO (ZMO) proportions, structures with ZnO at the center switch at lower fields than those with ZMO at the center at all four temperatures examined, demonstrating a topology-dependent response. Layer-resolved trajectories reveal topology-dependent switching sequences with direction-dependent redistribution of normal stress near the heterointerfaces, consistent with a stress-assisted cooperative pathway. Limiting MgO-containing structures exhibit sequential multilevel switching or low-polarity trapping, depending on thickness and temperature. Fixed-charge atomistic simulations complement previous continuum descriptions by resolving structural, energetic, and local stress evolution under a common applied field. TEM and STEM-EDS observations provide experimental structural context for the modeled architectures. Together, the results establish layer topology and interfacial mechanical confinement as design variables for wurtzite ferroelectric heterostructures.