Black silicon avalanche photodiode with dopant-free multiplication region achieves >98% EQE

Abstract

Conventional silicon avalanche photodiodes (Si APDs) rely on highly doped regions to enable impact ionization and achieve internal gain. However, inefficient charge collection in these regions, combined with front surface reflection, degrades the external quantum efficiency (EQE) of these devices. In this work, we mitigate both loss mechanisms by integrating black silicon (b-Si) surface nanostructuring with Al2O3 induced carrier collection in an inverted-mesa Si APD architecture. This design confines the electric field and defines the multiplication region without requiring ion implantation. The resulting devices display near-ideal responsivity (at M = 1) across the UV-visible spectrum, with EQE exceeding 100% at 200-400 nm (peak ~130%) and exhibiting 92-100% at 400-700 nm. Avalanche gains of M ~ 4 at 80 V, M ~ 10 at 100 V, and M ~ 23 near breakdown at ~110 V are obtained. Dark current remains in the picoampere range up to ~80 V but rises to the nanoampere range near breakdown, narrowing the practical bias window. Capacitance-limited rise times of ~30-570 ns are measured for device diameters of 1-5 mm. The results demonstrate that the developed architecture enables APDs capable of detecting every single photon over wide range of wavelengths.