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arXiv · 2609.22937

Efficient creation of shallow NV$^-$ ensembles by high-angle ion implantation

Kento Sasaki·Hideyuki Watanabe·Tokuyuki Teraji·Takashi Taniguchi·Kenji Watanabe·Kensuke Kobayashi
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Abstract

Negatively charged nitrogen-vacancy (NV$^-$) centers located a few nanometers below the diamond surface are key quantum defects for nanoscale sensing of external spins. However, the creation of shallow NV$^-$ centers with high yield remains a materials challenge. Here, we demonstrate that high-angle ion implantation enhances the creation efficiency of shallow NV$^-$ centers. By implanting $^{15}$N ions at angles exceeding 60$^\circ$, we achieve high NV$^-$ yields approaching 10% with effective NV$^-$ depths below 10 nm. These yields are significantly higher than those typically reported for shallow NV$^-$ creation. The enhanced NV$^-$ yield is consistent with an increased vacancy-to-nitrogen ratio in the near-surface region, which is expected to promote NV formation during annealing. The created NV$^-$ ensembles show coherence properties comparable to those of single shallow NV$^-$ centers at similar depths, and allow detection of nuclear spins in van der Waals materials attached to the diamond surface. Our results establish geometric control of ion implantation as a simple and broadly applicable approach to engineer shallow vacancy-related quantum defects.

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Kento Sasaki, Hideyuki Watanabe, Tokuyuki Teraji, Takashi Taniguchi, Kenji Watanabe, Kensuke Kobayashi. 2026-09-19. Efficient creation of shallow NV$^-$ ensembles by high-angle ion implantation. https://doi.org/10.1103/d8vg-ntsg

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