Orbital angular momentum accumulation in SrVO3 thin films

Abstract

Orbital transport in light transition metals has emerged as a promising route toward angular-momentum electronics, with Hanle magnetoresistance (HMR) providing a direct electrical probe of the orbital Hall effect (OHE) in non-magnetic conductors. Here we report magnetoresistance signatures consistent with orbital HMR in epitaxial SrVO$*3$ (SVO), a narrow-band $d^1$ oxide grown on (001)-oriented (LaAlO$*3$)$*{0.3}$(Sr$*2$TaAlO$*6$)$*{0.7}$ substrates. In films of different thickness and longitudinal resistivity, field-dependent measurements reveal a reproducible positive, even-in-field, and approximately quadratic $Δρ*{x-y}$ response, as expected for HMR. Angular measurements characterize the corresponding magnetoresistance anisotropy and reveal an additional non-Hanle contribution. Density functional theory (DFT) calculations yield an intrinsic orbital Hall conductivity $σ*{\mathrm{OH}}^{\mathrm{DFT}} = 390,(\hbar/e),Ω^{-1}\mathrm{cm}^{-1}$ and a spin Hall conductivity $σ_{\mathrm{SH}}^{\mathrm{DFT}} = -12,(\hbar/e),Ω^{-1}\mathrm{cm}^{-1}$ at the Fermi level, corresponding to $|σ_{\mathrm{OH}}^{\mathrm{DFT}}/σ_{\mathrm{SH}}^{\mathrm{DFT}}| \approx 33$, thus indicating a predominantly orbital response. Using the diffusive HMR framework with $λ_{\mathrm{OD}} = 2$ nm as a reference value, the 20.8 nm film gives conservative saturation-limit lower-bound (LB) estimates $θ_{\mathrm{OH,LB}} = 0.0144 \pm 0.0004$ and $σ_{\mathrm{OH,LB}} = (460 \pm 11),(\hbar/e),Ω^{-1}\mathrm{cm}^{-1}$, comparable to the DFT value. Across the series, lower-bound estimates obtained with the same $λ_{\mathrm{OD}}$ increase overall with longitudinal conductivity. These results suggest that narrow-band $d^1$ metallic oxides are a promising platform for orbital transport.