Single Best Fits Can Be Misleading: Resolving Common Trapping Signatures across FA--Cs Perovskites

Abstract

Identifying defects responsible for non-radiative recombination in metal-halide perovskites remains challenging, with no common defect signatures established across compositions. Here, we combine fluence-dependent time-resolved photoluminescence, full Shockley--Read--Hall modelling and Bayesian posterior inference across an FA$_{1-x}$Cs$_x$PbI$_3$ compositional series. We show that trap occupation governs carrier dynamics and defect-parameter identifiability in semiconducting materials: weakly occupied states exhibit electron-capture-coefficient--trap-density degeneracies, whereas trap filling lifts them. In our perovskite systems, a non-degenerate signature $Tβ$, characterized by a strongly asymmetric $β_p/β_n$ capture-coefficient ratio, occurs across all compositions, suggesting substantial trap filling is a general feature of perovskite carrier dynamics. We further identify $Tα$ as a shared, device-performance-limiting non-radiative recombination channel, while a shallow $Tε$ signature unique to FAPbI$_3$ produces the largest steady-state non-radiative recombination rate and is consistent with the previously observed high stacking-fault density of this composition. This framework therefore provides a basis for comparing trapping signatures across different semiconducting materials at room temperature.