Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering

Atharva Paranjape; Kathrin Küster; Olga Shevstova; Lisa Ebo; Toni Hache; Klaus Kern; Rainer Stöhr; Jörg Wrachtrup; Aparajita Singha

arXiv · 2609.20137

Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering

Atharva Paranjape·Kathrin Küster·Olga Shevstova·Lisa Ebo·Toni Hache·Klaus Kern·Rainer Stöhr·Jörg Wrachtrup·Aparajita Singha

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Abstract

Control of charge-state stability in near-surface quantum defects is critical for nanoscale sensing, yet remains particularly challenging under ultra-high vacuum (UHV), where surface-induced band bending destabilizes the metrologically relevant charge-state. Here, we present a robust and reproducible approach for stabilizing shallowly implanted (< 10 nm deep) nitrogen-vacancy (NV) centers in near-UHV conditions (P = $3 \times 10^{-9}$ mbar) based on dielectric interface engineering. Through measurements on individually addressable NV centers, we demonstrate that a TiO2 coating on the diamond suppresses surface-induced electrostatic fields, yielding a 79% increase n NV- population and a 45% enhancement in NV-spin resonance contrast at room temperature. Coherent control measurements further reveal suppressed charge-state conversion dynamics. These results establish dielectric screening as a powerful and reproducible strategy to engineer charge transition energetics of NV centers in scanning-probe-compatible geometries under extreme conditions.

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Atharva Paranjape, Kathrin Küster, Olga Shevstova, Lisa Ebo, Toni Hache, Klaus Kern, Rainer Stöhr, Jörg Wrachtrup, Aparajita Singha. 2026-09-17. Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering. https://arxiv.org/abs/2609.20137

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