arXiv ScienceSearch

arXiv · 2609.19373

Static-to-dynamic field conversion in a temporally switched Lorentz medium

Abstract

We investigate static-to-dynamic electromagnetic field conversion in a temporally switched Lorentz medium initially subjected to an electrostatic field. An abrupt change of the oscillator strength drives the material away from its initial equilibrium, while the polarization retains memory of the pre-switch state and acts as the source of the resulting transient. We formulate the resulting initial-value problem in the Laplace domain and derive an analytical representation of the generated field in terms of the poles of the finite Lorentz slab. Material dispersion gives rise to a richer modal structure than in the nondispersive case, including families of slab-mode poles that accumulate toward the singularities associated with the Lorentz polarization dynamics. We further show that material memory governs the earliest stage of the transient, producing a smooth field onset and setting the velocity of the earliest propagating disturbance through the high-frequency permittivity. Because the temporal switch generates broadband spectral content, the transient samples positive-, near-zero-, and negative-permittivity regions of the post-switch material response, leading to qualitatively different spatial field distributions. These results reveal how material dispersion and memory fundamentally shape the generation and evolution of radiation produced from an initially static electromagnetic state.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Alazar G. Salfore, Mario J. Mencagli. 2026-09-16. Static-to-dynamic field conversion in a temporally switched Lorentz medium. https://arxiv.org/abs/2609.19373

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph