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arXiv · 2609.11114

High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration

Ziheng Wang·Wen He·Chen Gu·Kai Jiang·Liankai Zheng·Jinxiu Zhao·Zhiyu Lin·Xiangjun Liu·Di Geng·Ling Li·Mengwei Si
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Abstract

The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still exhibit substantially inferior performance compared with their n-type counterparts. In this work, we demonstrate high-performance p-type SnOx transistors by atomic layer deposition (ALD), as back-end-of-line compatible devices for monolithic 3D integration. The SnOx transistors exhibit high field-effect mobility of 6.9 cm2/Vs, low subthreshold swing (SS) of 185 mV/dec, decent on/off ratio (ION/IOFF) of 1.8*104 and high bias stability. By scaling the channel length down to 80 nm, a high on-current of 38.7 mA/mm at VDS of -1 V is achieved. It is understood that precursor and reaction engineering to suppress Sn4+ component in SnOx film are the key for performance enhancement. Furthermore, a complementary field-effect transistor with ALD SnOx p-FET vertically stacking on ALD In2O3 n-FET is also demonstrated, achieving maximum voltage gain of 21 V/V at VDD of 4 V. These findings suggest ALD SnOx as a promising candidate for scaled high-performance BEOL p-type transistors.

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Ziheng Wang, Wen He, Chen Gu, Kai Jiang, Liankai Zheng, Jinxiu Zhao, Zhiyu Lin, Xiangjun Liu, Di Geng, Ling Li, Mengwei Si. 2026-09-10. High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration. https://arxiv.org/abs/2609.11114

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