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arXiv · 2609.09771

Facile hBN-hBN Interfacial Overlap Engineering for Enhanced Quantum Emitter Formation

Nhat Minh Nguyen·Trung Vuong Doan·Md Shakhawath Hossain·Akila Elangasinghe·Duc Anh Ngo·Ha Ngoc Duy Huynh·Thi Ngoc Anh Mai·Yongliang Chen·Kenji Watanabe·Takashi Taniguchi·Michael G. Ruppert·Chaohao Chen·Xiaoxue Xu·Toan Dinh·Toan Trong Tran
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Abstract

Quantum emitters in two-dimensional materials, particularly hBN, are promising platforms for quantum technologies. However, achieving high-density emitters at predetermined locations while preserving optical quality remains challenging. Here, we introduce a facile, cost-effective double-layer all-dry transfer approach to deterministically create overlap regions between hBN flakes. These pre-defined capped regions exhibit a significantly enhanced emitter density, with up to a 15-fold increase compared to uncapped areas. Importantly, this method does not compromise emitter quality: emitters within overlap regions demonstrate excellent optical performance, including high signal-to-background and signal-to-noise ratios, large Debye-Waller factors, high brightness, and strong spectral stability. Possible defect configurations are also discussed to contextualize the observed emission characteristics. This scalable strategy enables preferential formation of quantum emitters in targeted regions, achieving higher densities than simple treatments such as plasma irradiation while avoiding the complexity of advanced fabrication techniques. The approach provides a practical pathway for integrating high-quality quantum emitters into scalable quantum photonic platforms.

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Nhat Minh Nguyen, Trung Vuong Doan, Md Shakhawath Hossain, Akila Elangasinghe, Duc Anh Ngo, Ha Ngoc Duy Huynh, Thi Ngoc Anh Mai, Yongliang Chen, Kenji Watanabe, Takashi Taniguchi, Michael G. Ruppert, Chaohao Chen, Xiaoxue Xu, Toan Dinh, Toan Trong Tran. 2026-09-09. Facile hBN-hBN Interfacial Overlap Engineering for Enhanced Quantum Emitter Formation. https://arxiv.org/abs/2609.09771

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