Topological Impurity Bands

Abstract

The effects of disorder on topological phases of matter are typically either preservation of topology or its destruction. For example, the quantum Hall effect's quantization and chiral edge mode remain robust until a strong-disorder percolation transition exits the topological phase. Disorder can also enlarge a preexisting topological phase, yielding a topological Anderson insulator (TAI). However, the reliance of TAI and other theoretical treatments on perturbatively averaging out long-wavelength randomness suggests that additional effects might appear when the disorder involves localized defects. Here we show that a finite density of randomly distributed defects can generate various new topological phase transitions. This route to disorder-induced topology can be viewed as the formation of topological impurity bands (TIB) and is applicable even if the initial clean model is a trivial band insulator. The theory relies on an orbital-dependent vorticity of impurity bound states, which we derive analytically near a generic Dirac cone phase transition as well as using the Chern insulator lattice models of Qi-Wu-Zhang and Haldane. Their numerically computed phase diagrams at 3% defect density show robust topological transitions in distinct TIB and TAI regimes, suggesting a local route to topological phases.