Unveiling the Scaling Potential of Drain Merge through Active (DMtA) in CFETs: Breaking the Super-Via Bottlenecks and Unlocking New PPA Boosters

Abstract

Drain merge (DM), a super via vertically connecting the common S/D terminals of stacked n/pFETs in Complementary FETs (CFETs), blocks further parasitic optimization and cell scaling. For the first time, this work systematically investigates the state-of-the-art Drain Merge through Active (DMtA), a revolutionary technology reported recently with the DM embedded in the active region, through a comprehensive DTCO framework spanning process integration, contact-configuration-dependent (CTCD) compact modeling, standardcell design, RO evaluation and block-level PPA benchmark on a 32-bit RISC-V Ibex core. By reducing DM parasitics and enabling DM-width optimization, DMtA improves RO frequency by 11.7% over its conventional Drain Merge through field (DMtF) counterpart. Active widening and Area Borrowing, the latter first reported in [8] and exploiting spatial slack in adjacent cells to further enlarge the nanosheet width (WNS), increase the maximum Ibex-core frequency by up to 34.8%. More importantly, DMtA also enables the once GAA-exclusive Hyper-cells on CFETs by merging the active regions across adjacent cell rows, providing a further 8.7% frequency gain. A post-routing floating-output-pin-aware optimization further removes redundant S/D contacts (CTs) and reduces power by 5.3%. Finally, DMtA facilitates more area-efficient 2.5T cell scaling by preserving single-row cell compatibility, reducing post-PR core area by 25.7%.