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arXiv · 2609.04600

Demonstration of room-temperature, magnetic-field-free, and ultralow-power spin-orbit torque logic device based on composition-uniform van der Waals magnet Fe3GaTe2

Zhengxiao Li·Qianbiao Liu·Wenliang Zhu·Lijun Zhu
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Abstract

Van der Waals magnets have received blooming interest in material science and spintronics for the advantages of low magnetization, flexible stacking, strong tunability, and dangling-bond-free interfaces. However, there has been no report of room-temperature magnetic-field-free spin logic device based on a van der Waals magnet. Here, we demonstrate a room-temperature, field-free, low-power, scalable spin-orbit torque in-memory computing logic device utilizing a van der Waals magnet Fe3GaTe2 bit with strong perpendicular magnetic anisotropy and a Pt channel with strong spin Hall effect, high electrical conductivity, and electric asymmetries. Current pulse width-dependent switching measurement reveals a low intrinsic critical magnetic-field-free switching current of 1.8e7 A cm-2, a high thermal stability factor of 50, and the potential of an ultralow write power of 1.5 fJ per bit at 1 ns pulse width for a typical industrial-level device dimensions (40 times lower than the industrially optimized W/FeCoB device). These results suggest a great potential of van der Waals magnets in dense, ultralow-power, scalable in-memory computing technologies.

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Zhengxiao Li, Qianbiao Liu, Wenliang Zhu, Lijun Zhu. 2026-09-04. Demonstration of room-temperature, magnetic-field-free, and ultralow-power spin-orbit torque logic device based on composition-uniform van der Waals magnet Fe3GaTe2. https://arxiv.org/abs/2609.04600

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