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arXiv · 2608.24495

AlGaAs nanowires as a universal platform for GaAs, InGaAs, and InAs quantum dots

Rohan Radhakrishnan·Rodion Reznik·Gilles Patriarche·Igor Ilkiv·Konstantin Kotlyar·Anna Andreeva·George Cirlin·Nika Akopian
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Abstract

Optical quantum dots (QDs) are central to photonic quantum technologies, with fabrication approaches tailored to different spectral ranges. A key challenge, however, is the realization of a unified platform$\unicode{x2014}$a single growth method combined with a host material offering a designable architecture$\unicode{x2014}$enabling wavelength tunability across the full emission range and co-integration of multiple quantum dots. Here, we introduce AlGaAs nanowires as a universal host for GaAs, InGaAs, and InAs QDs. Building on our previous demonstration of high-quality GaAs QDs, we realize InGaAs QDs with tunable emission by varying the growth duration from 2 to 5 s, achieving emission at 780 and 920 nm. We further showcase the platform's versatility for multi-quantum-dot devices by co-integrating two InGaAs QDs, as well as GaAs and InGaAs QDs within a single nanowire. Finally, we initiate a first step toward pure InAs QDs by growing a pristine InAs segment on AlGaAs nanowires, demonstrating material compatibility.

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Rohan Radhakrishnan, Rodion Reznik, Gilles Patriarche, Igor Ilkiv, Konstantin Kotlyar, Anna Andreeva, George Cirlin, Nika Akopian. 2026-08-25. AlGaAs nanowires as a universal platform for GaAs, InGaAs, and InAs quantum dots. https://arxiv.org/abs/2608.24495

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