Chemical Control of Electronic Structure and Topology in Tellurium-Encapsulated Silicene

Gabriel Elyas Gama Araujo; Andre Luis de Oliveira Batista; Willian Oliveira Santos; Alexandre Amaral Leitao; Alexandre Cavalheiro Dias; Andreia Luisa da Rosa

arXiv · 2608.21295

Chemical Control of Electronic Structure and Topology in Tellurium-Encapsulated Silicene

Gabriel Elyas Gama Araujo·Andre Luis de Oliveira Batista·Willian Oliveira Santos·Alexandre Amaral Leitao·Alexandre Cavalheiro Dias·Andreia Luisa da Rosa

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Abstract

We investigate chemical control of the electronic, optical, and topological properties of two-dimensional \ce{Si2X2Te2} (\ce{X} = \ce{B}, \ce{Al}, \ce{Ga}, and \ce{In}) monolayers using first-principles calculations. All compounds are dynamically stable semiconductors, with their vibrational and electronic properties evolving systematically upon group-III substitution. Hybrid-functional calculations including spin--orbit coupling reveal predominantly $p$-orbital band edges and increasingly pronounced relativistic effects from B to In. Most notably, the calculated $\mathbb{Z}_2$ invariant identifies \ce{Si2In2Te2} as a candidate quantum spin Hall insulator, while the B-, Al-, and Ga-based monolayers remain topologically trivial. Bethe--Salpeter calculations further show that electron--hole interactions redistribute oscillator strength near the absorption onset while preserving a weak in-plane optical anisotropy. Our results establish group-III substitution as a simple chemical route to tune the electronic structure and drive a transition from trivial to nontrivial topology in \ce{Si2X2Te2} monolayers.

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Gabriel Elyas Gama Araujo, Andre Luis de Oliveira Batista, Willian Oliveira Santos, Alexandre Amaral Leitao, Alexandre Cavalheiro Dias, Andreia Luisa da Rosa. 2026-08-21. Chemical Control of Electronic Structure and Topology in Tellurium-Encapsulated Silicene. https://arxiv.org/abs/2608.21295

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