Savi-Bhransha: Graph-Theoretic Dislocation-Loop Characterization in Crystals

Abstract

Dislocation loops govern the properties of crystalline materials, but extracting their detailed characteristics from atomistic simulations is difficult when loops are fragmented or embedded in compact defect debris. We present Savi-Bhransha, a graph-theoretic method that reconstructs interstitial and vacancy loops directly from local defect-displacement motifs, without constructing a global interface mesh. The method identifies Burgers-vector family, habit plane, loop size, segment-wise edge/screw character, and boundary and bulk defect populations for BCC, FCC, and HCP crystals. We apply it to single-cascade simulations over a range of energies in BCC W and HCP Zr, and to successive collision cascades in BCC W and FCC FeNiCr. We benchmark the method against the Dislocation Extraction Algorithm (DXA). Total dislocation lengths remain strongly correlated between the two methods, while Savi-Bhransha returns more stable loop-level objects in complex environments where DXA returns fragmented, overlapping open segments. Savi-Bhransha also better resolves mixed-morphology defects and dislocations near other defects, including vacancy clusters. Median runtime speedups are 6.34x for BCC W and 8.86x for HCP Zr, with peak-memory reductions up to 7.77x. In successive W cascades, the resolved boundary-defect concentration brackets transient-grating-spectroscopy measurements and the predicted Burgers-vector fraction agrees with room-temperature TEM. In FCC FeNiCr, the method resolves Heidenreich-Shockley dissociation, with a Shockley-pair signature in about 91% of surviving <110>-family interstitial clusters. Savi-Bhransha therefore enables efficient, topology-resolved analysis of large radiation-damage simulations and direct comparison with experimentally accessible observables.