One Aperture, Two Colors: Depth-Allocated Bilayer Silicon Nitride Gratings for Trapped-Ion Addressing

Abstract

Scaling multicolor quantum control on chip presents a geometric conflict: each added wavelength traditionally requires another routing corridor, emitter, and electrode opening, consuming trap-surface area and exposing charge-susceptible dielectric near the quantum target. This work introduces an all-planar, vertically stacked silicon-nitride architecture that co-registers independently fed optical transitions within one 24 x 24 $μ$m footprint. For $^{40}\text{Ca}^+$, the device focuses the 729.4 nm qubit and 854.2 nm repump wavelengths onto a shared site 70 $μ$m above the upper film. A hierarchical design combines a differentiable cell search for a three-level scatterer, analytic confocal phase synthesis, and deterministic depth allocation across two etches per layer, preserving an explicit 125 nm propagation-axis line-and-space floor without grayscale patterning. Retargeting the upper-layer phase co-registers the focal maxima to within 0.1 $μ$m in mesh-converged Tidy3D and independently constructed Lumerical FDTD models, retaining >99.9% of each color's peak intensity at the common coordinate with focusing efficiencies of 0.410 and 0.168. At 5 $μ$m ion spacing, the qubit channel reaches -24.8 dB point crosstalk, remains below -18.0 dB across a 0.5 $μ$m-radius positioning disk, and yields -23.0 dB symmetric-traceless field-gradient suppression. In the analytic House conductor geometry, the shared footprint provides 15.3 $μ$m clearance to the nearest radio-frequency rail with zero RF-null displacement. By uniting separate optical inputs and transition-specific wavefronts within one ion-facing aperture, this hierarchy establishes a transferable template for addressing other atomic wavelength pairs and dense multicolor quantum interfaces.