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arXiv · 2607.19051

Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators

Manuel Meyer·Tobias Fähndrich·Sebastian Schmid·Justus Walter·Martin Kamp·Adriana Wolf·Sergey Krishtopenko·Guillaume Sigu·Jean-Baptiste Rodriguez·Eric Tournie·Gerald Bastard·Frederic Teppe·Fabian Hartmann·Sven Höfling·Benoit Jouault
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Abstract

Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasi-substrates. In macroscopic Hall bars exceeding the phase coherence length, a multi-probe analysis reveals an insulating bulk and a constant edge resistance over a wide electric-field range. In microscopic devices with edge lengths below the phase coherence lengths, the edge resistance remains robust and quantized accross a broad field range, revealing the intrinsic resilience of helical edge channels to electric-field perturbations. Only beyond a threshold value, parasitic edge contributions emerge. These results establish dual gating as a reliable strategy to suppress parasitic conduction while stabilizing helical edge transport, providing a versatile and reproducible platform for tunable topological transport in III-V quantum spin Hall systems.

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Manuel Meyer, Tobias Fähndrich, Sebastian Schmid, Justus Walter, Martin Kamp, Adriana Wolf, Sergey Krishtopenko, Guillaume Sigu, Jean-Baptiste Rodriguez, Eric Tournie, Gerald Bastard, Frederic Teppe, Fabian Hartmann, Sven Höfling, Benoit Jouault. 2026-07-21. Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators. https://arxiv.org/abs/2607.19051

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