Phase-selective orbital-charge conversion in $\mathrm{MoTe_2}$

J. L. Costa; E. Santos; G. R. Gallo; G. Rodrigues-Junior; R. O. Cunha; E. L. T. França; R. Cardias; T. G. Rappoport; J. B. S. Mendes; A. Azevedo

arXiv · 2607.01623

Phase-selective orbital-charge conversion in $\mathrm{MoTe_2}$

J. L. Costa·E. Santos·G. R. Gallo·G. Rodrigues-Junior·R. O. Cunha·E. L. T. França·R. Cardias·T. G. Rappoport·J. B. S. Mendes·A. Azevedo

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Abstract

Two-dimensional transition metal dichalcogenides (TMDs) have emerged as promising materials for spin--orbitronics owing to their strong spin--orbit coupling and rich electronic phases. However, their orbital transport properties remain largely unexplored. Here, we demonstrate that the orbitronic response of $\mathrm{MoTe_2}$ is governed by a thickness-driven structural phase transition. RF-sputtered $\mathrm{MoTe_2}$ thin films exhibit a crossover at a critical thickness of approximately $4.5\,\mathrm{nm}$, stabilizing in the metallic $1T^\prime$ phase below this threshold and in the semiconducting $2H$ phase above it. Raman spectroscopy and scanning tunneling spectroscopy (STS) confirm the structural and electronic transition, revealing gapless behavior in ultrathin films and a finite band gap in thicker samples. Spin-pumping measurements detect an additional transverse charge-conversion signal exclusively in metallic $1T^\prime$-$\mathrm{MoTe_2}$, in agreement with first-principles calculations that identify a dominant orbital Rashba--Edelstein response as the underlying conversion mechanism.

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J. L. Costa, E. Santos, G. R. Gallo, G. Rodrigues-Junior, R. O. Cunha, E. L. T. França, R. Cardias, T. G. Rappoport, J. B. S. Mendes, A. Azevedo. 2026-07-02. Phase-selective orbital-charge conversion in $\mathrm{MoTe_2}$. https://arxiv.org/abs/2607.01623

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