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arXiv · 2606.28528

High yield creation of germanium vacancy centers in diamond by focused ion beam implantation and high temperature annealing

S. Dietel·E. Scattolo·J. Fuhrmann·L. Kazak·A. Cian·E. Missale·D. Giubertoni·F. Jelezko
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Abstract

Negatively charged germanium vacancy centers (GeV) in diamond are a promising platform for quantum computing and quantum communication. However, these applications require the precise incorporation of GeV centers with good optical properties inside of nanophotonic structures. In this work, we demonstrate the highly efficient local creation of GeV centers in diamond via focused-ion-beam implantation, followed by high-temperature annealing. We report the successful creation of GeV centers over the depth range of 5.5 - 30 nm. Implantation at low fluence enables the creation of single GeV centers. The formation yield strongly depends on implantation energy and fluence, reaching up to 33% at energies of 35 and 70 keV. This method, therefore, enables the efficient creation of GeV centers within a small, well-defined local sample volume and offers a potential means of incorporating them into photonic structures.

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S. Dietel, E. Scattolo, J. Fuhrmann, L. Kazak, A. Cian, E. Missale, D. Giubertoni, F. Jelezko. 2026-06-26. High yield creation of germanium vacancy centers in diamond by focused ion beam implantation and high temperature annealing. https://arxiv.org/abs/2606.28528

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