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Controlled chemical vapor deposition for synthesis of emerging Mo(W)Te2 systems

Ya Deng·Zi-Yi Han·Yao Wu·Kongyang Yi·Ya-Ning Ren·Dundong Yuan·Chao Zhu·Lin He·Zheng Liu
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Abstract

The Group-VI transition metal ditellurides offer a rich platform for correlated and topological phenomena, yet their structural polymorphism and instability complicate the creation of single crystals and heterointerfaces. Here, we introduce a confined-space chemical vapor deposition (CVD) strategy that lowers the growth temperature window and, when combined with tailored precursor configurations and stepwise thermal ramps, enables the deterministic synthesis of high-quality single crystals, alloys, and lateral/vertical heterostructures. High-resolution aberration-corrected STEM provides atomic characterization of lattice-matched Mo(W)Te2 lateral heterostructure, revealing nearly atomically sharp, compositionally well-defined seamless boundaries. This approach avoids the thickness nonuniformity and structural limitations commonly associated with exfoliated samples, enabling reproducible fabrication of clean heterointerfaces and establishing a nearly ideal in-situ experimental system. Furthermore, scanning tunneling microscopy and spectroscopy (STM and STS) enable direct imaging of the seamless boundaries in Mo(W)Te2 lateral heterostructures, while uncovering their distinct real-space distributions of the local density of states. Our results establish a scalable pathway for engineering crystalline Te-based structures with controlled geometry and stacking, providing an essential step toward quantum and topological device platforms based on the transition metal ditellurides family.

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Ya Deng, Zi-Yi Han, Yao Wu, Kongyang Yi, Ya-Ning Ren, Dundong Yuan, Chao Zhu, Lin He, Zheng Liu. 2026-06-25. Controlled chemical vapor deposition for synthesis of emerging Mo(W)Te2 systems. https://doi.org/10.1016/j.mattod.2026.103390

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